Simulation of Power Heterojunction Bipolar Transistors on Gallium Arsenide
نویسندگان
چکیده
We demonstrate the results of two-dimensional (2-D) hydrodynamic simulations of one-finger power heterojunction bipolar transistors (HBTs) on GaAs. An overview of the physical models used and comparisons with experimental data are given. We present models for the thermal conductivity and the specific heat applicable to all relevant diamond and zinc-blende structure semiconductors. They are expressed as functions of the lattice temperature and, in the case of semiconductor alloys, of the material composition.
منابع مشابه
Simulation of Heterojunction Bipolar Transistors on Gallium-Arsenide
Heterojunction Bipolar Transistors (HBTs) attract much industrial interest nowadays because of their capability to operate at high current densities [l]. AlGaAs/GaAs or InGaP/GaAs based devices are used for power applications in modern mobile telecommunication systems. Accurate simulations save expensive technological efforts to obtain significant improvements of the device performance. The two...
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